| 一种CMOS工艺离子敏场效应型晶体管的模型 |
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| 引用本文： | 卫铭斐,于军琪,陈登峰. 一种CMOS工艺离子敏场效应型晶体管的模型[J]. 电子器件, 2011, 34(4): 367-369 |
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| 作者姓名： | 卫铭斐 于军琪 陈登峰 |
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| 作者单位： | 西安建筑科技大学信息与控制学院; |
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| 基金项目： | 陕西省教育厅专项科研计划项目(02JC50) |
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| 摘 要： | 采用CMOS工艺可以实现离子敏场效应型晶体管(ISFET),若在栅极氧化层之上保留多晶硅层,并通过引线使其与 外界的金属层相连作为悬浮的栅极,可实现悬浮栅结构ISFET.从ISFET的传感机理出发,根据表面基模型,利用HSPICE建 立了悬浮栅结构ISFET的物理模型.以该模型为研究对象,探讨了薄膜等效电阻、薄膜等效电...
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| 关 键 词： | 离子敏场效应晶体管 器件模型 静态特性 动态特性 |
Model of CMOS ion-sensitive field effect transistor |
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| WEI Mingfei,YU Junqi,CHEN Dengfeng. Model of CMOS ion-sensitive field effect transistor[J]. Journal of Electron Devices, 2011, 34(4): 367-369 |
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| Authors: | WEI Mingfei YU Junqi CHEN Dengfeng |
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| Affiliation: | WEI Mingfei~*,YU Junqi,CHEN Dengfeng (School of Information and Control,Xi'an University of Architecture and Technology,Xi'an 710055,China) |
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| Abstract: | An ion-sensitive field effect transistor(ISFET) can be achieved by CMOS technology.If a polysilicon layer is kept on the oxide layer of the gate and connected to an external metal layer as a floating gate,a floating gate ISFET can be realized.Based on the sensing mechanism of ISFET and the site-binding model,the physical model of the floating gate ISFET is established from HSPICE.The influence of the membrane resistance,capacitance and the line parasitic capacitance on the dynamic characteristics of delay t... |
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| Keywords: | ion-sensitive field effect transistor device model static characteristics dynamic characteristics |
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