Fabrication of high-performance AlxGa1-xAs/InyGa1-yAs/GaAs resonant tunneling diodes using amicrowave-compatible technology |
| |
| Authors: | Lippens D Barbier E Mounaix P |
| |
| Affiliation: | Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. de Lille Flanders Artois, Villeneuve d'Ascq; |
| |
| Abstract: | A microwave-compatible process for fabricating planar integrated resonant tunneling diodes (RTDs) is described. High-performance RTDs have been fabricated using AlxGa1-xAs/Iny Ga1-yAs/GaAs strained layers. Peak-to-valley current ratios (PVRs) of 4.8:1 with simultaneous peak current densities of 4×104 A/cm2 have been achieved at room temperature for diodes of area 9 μm2. Accurate measurements of reflection gain versus frequency between 1.5 and 26.5 GHz in the negative differential region indicate that the present technology is promising for millimeter-wave integrated circuits including self-oscillating mixers, frequency multipliers, and detectors |
| |
| Keywords: | |
|
|
