A 64-bit 800-MHz insulated-gate CCD on InP

Sixty-four-bit 259-gate insulated gate buried-channel charge-coupled devices (CCD's) have been fabricated on semi-insulating InP using a planar ion implantation process. These 5-µm gate-length structures, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz and exhibited average effective stored charge per unit area in their channels as high as 6 × 10¹²electrons cm^-2. Input-to-output delay-time measurements as a function of frequency clearly indicate proper CCD operation.