首页 | 本学科首页   官方微博 | 高级检索  
     


Photoelectric properties of TiO2-ZrO2 thin films prepared by sol-gel method
Authors:Zhang Haifeng  Ruan Shengping  Feng Caihui  Xu Baokun  Chen Weiyou  Dong Wei
Affiliation:State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China.
Abstract:Acidic sols of TiO2, ZrO2 and Ti-Zr mixed oxide precursors were prepared. The sols were then smeared on quartz substrate and annealed at 650 degrees C for 2 hour to form polycrystalline oxide films. XRD, SEM, UV-visible absorption spectra and XPS were carried out to characterize the films. It was found that the crystalline phase of pure titania is an anatase and pure zirconia is a tetragonal. The binary oxides show the anatase phase at the molar ratio of Ti:Zr = 2.73:1, which means that solid solution was formed. The absorption edge of the TiO2-ZrO2 binary oxides showed obvious blue shift as the Zr ratio increased. The results obtained indicate that the band gap of the binary oxides could be adjusted from 3.2 eV (TiO2) to 7.8 eV (ZrO2) by varying the molar ratio of Ti and Zr. Au interdigitated electrodes were produced by planar technology and MSM (metal-semiconductor-metal) structure UV detector based on TiO2-ZrO2 binary oxides was fabricated. Obvious photoelectric response was observed.
Keywords:
本文献已被 PubMed 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号