Monolithically integrated 780-nm-band high-power and 650-nm-bandlaser diodes with real refractive index guided self-aligned structure |
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Authors: | Onishi T. Imafuji O. Fukuhisa T. Mochida A. Kobayashi Y. Yuri M. Itoh K. Shimizu H. |
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Affiliation: | Semicond. Co., Matsushita Electr. Ind. Co. Ltd., Kyoto; |
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Abstract: | 780-nm-band high-power and 650-nm-band laser diodes (LDs) with real refractive index guided self-aligned (RISA) structures are monolithically integrated for the first time. High-power and fundamental transverse mode operation at an output power of 100-mW continuous wave (CW) up to 80°C is attained for the 780-nm-band LD. For the 650-nm-band LD, high temperature and fundamental transverse mode operation at an output power of 10-mW CW up to 80°C is obtained |
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