Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films |
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Authors: | Sudhakar Shet Kwang-Soon Ahn Heli Wang Ravindra Nuggehalli Yanfa Yan John Turner Mowafak Al-Jassim |
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Affiliation: | (1) National Renewable Energy Laboratory, Golden, CO 80401, USA;(2) New Jersey Institute of Technology, Newark, NJ 07102, USA;(3) School of Display and Chemical Engineering, Yeungnam University Gyeongsan, Gyeongbuk, 712-749, South Korea |
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Abstract: | Ga–N co-doped ZnO thin films with reduced bandgaps were deposited on F-doped tin-oxide-coated glass by radio-frequency magnetron
sputtering at different substrate temperatures in mixed N2 and O2 gas ambient. We found that Ga–N co-doped ZnO films exhibited enhanced crystallinity when compared to undoped ZnO films grown
under the same conditions. Furthermore, Ga–N co-doping ensured enhanced N-incorporation ZnO thin films as the substrate temperature
is increased. As a result, Ga–N co-doped ZnO thin films exhibited much improved photoelectrochemical (PEC) response, compared
to ZnO thin films. Our results therefore suggest that the passive co-doping approach could be a means to improve PEC response
for bandgap-reduced wide-bandgap oxides through impurity incorporation. |
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