Aluminum and boron ion implantations into 6H-SiC epilayers |
| |
| Authors: | Tsunenobu Kimoto Akira Itoh Hiroyuki Matsunami Toshitake Nakata Masanori Watanabe |
| |
| Affiliation: | (1) Department of Electronic Science and Engineering, Kyoto University, Yoshidahonmachi, Sakyo, 606-01 Kyoto, Japan;(2) Ion Engineering Research Institute, Corporation, Tsuda, Hirakata, 573-01 Osaka, Japan |
| |
| Abstract: | Aluminum and boron ion implantations into n-type 6H-SiC epilayers have been systematically investigated. Redistribution of implanted atoms during high-temperature annealing at 1500°C is negligibly small. The critical implant dose for amorphization is estimated to be 1 × 1015 cm−2 for Al+ implantation and 5 × 1015 cm-2 for B+ implantation. By Al+ implantation followed with 1500°C-annealing, p-type layers with a sheet resistance of 22 kΩ/— can be obtained. B+ implantation results in the formation of highly resistive layers, which may be attributed to the deep B acceptor level. |
| |
| Keywords: | Electrical activation ion implantation Rutherford backscattering spectroscopy silicon carbide |
| 本文献已被 SpringerLink 等数据库收录！ |
|
