| Nd掺杂对ZnSe薄膜微结构的影响 |
| |
| 引用本文： | 吴蓉,李蓉萍,安晓晖,何志刚,李忠贤.Nd掺杂对ZnSe薄膜微结构的影响[J].信息记录材料,2009,10(6):20-23. |
| |
| 作者姓名： | 吴蓉 李蓉萍 安晓晖 何志刚 李忠贤 |
| |
| 作者单位： | 内蒙古大学,物理科学与技术学院,呼和浩特,010021 |
| |
| 基金项目： | 内蒙古教育厅资助项目 |
| |
| 摘 要： | 利用真空蒸发的方法制备ZnSe多晶薄膜,并采用双源法对薄膜进行了稀土元素Nd的掺杂。对薄膜进行了XRD测试,并计算了薄膜的晶粒尺寸、晶格常数以及内应力。结果表明,当原子配比Zn∶Se=0.9∶1时可制备较理想的ZnSe多晶薄膜,稀土Nd掺杂并未改变样品的物相结构,掺杂使得薄膜的晶粒尺寸减小,晶胞体积增加,内应力和晶格常数改变。实验还发现,适度的轻掺杂Nd可增加ZnSe薄膜的光透射性。
|
| 关 键 词： | ZnSe薄膜 微结构 真空蒸发 掺杂 |
Effect of Nd Doping on Microstructure of ZnSe Thin Films |
| |
| WU Rong,LI Rong-ping,AN Xiao-hui,HE Zhi-gang,LI Zhong-xian.Effect of Nd Doping on Microstructure of ZnSe Thin Films[J].Information Recording Materials,2009,10(6):20-23. |
| |
| Authors: | WU Rong LI Rong-ping AN Xiao-hui HE Zhi-gang LI Zhong-xian |
| |
| Affiliation: | WU Rong,LI Rong-ping,AN Xiao-hui,HE Zhi-gang,LI Zhong-xian(College of Physical Science , Technology,Inner Mongolia University,Huhhot 010021,China) |
| |
| Abstract: | ZnSe thin films are prepared by vacuum evaporation on glass substrate.The thin films were Nd-doped by double-source evaporation.The XRD were studied,and the grain size,Internal stress and lattice constant were calculated.And we found that Nd doping did not change the sample's crystal structure,but reduced its grain size,increased its internal stress and lattice constant,and improved its cell volume and optical transmission. |
| |
| Keywords: | ZnSe thin films microstructur vacuum evaporation doping |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
