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α-Si3N4晶须、晶柱与生长温度关系的研究
引用本文:徐功骅,来月英.α-Si3N4晶须、晶柱与生长温度关系的研究[J].复合材料学报,1996,13(1):55-59.
作者姓名:徐功骅  来月英
作者单位:1. 清华大学化学系, 北京 100084;2. 同济大学化学系, 上海 200092
摘    要:本文采用无定形氮化硅超细粉制备α-Si3N4晶须和晶柱,并对生长温度对晶须中的缺陷的影响进行了研究。结果表明:晶须生长时能否得到完整的晶体,与其生长温度有关,只有某一温度范围(1430℃±30℃)生长时,才能得到比较完整的晶体,晶须的生长温度太高或太低均会引起晶体生长的不完整性,晶须中会出现大量的缺陷,温度继续升高时,在晶须中又出现了晶粒,继而生长成晶柱。

关 键 词:晶须  晶柱  α-Si3N4
收稿时间:1994-10-31
修稿时间:1995-01-10

STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si3N4 WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE
Xu Gonghua,Lai Yueying,Liu Yansheng,Wei Jingzhi,Wu Huawu,Zhang Kehong.STUDY OF THE RELATIONSHIP BETWEEN ALPHA-Si3N4 WHISKERS,CRYSTALLINE PILLAR AND GROWTH TEMPERATURE[J].Acta Materiae Compositae Sinica,1996,13(1):55-59.
Authors:Xu Gonghua  Lai Yueying  Liu Yansheng  Wei Jingzhi  Wu Huawu  Zhang Kehong
Affiliation:1. Department of Chemistry, Tsinghua University, Beijing 100084;2. Department of Chemistry, Tongji University, Shanghai 200092
Abstract:Alpha-silicon nitride whiskers and crystalline pillars were produced by amorphous silicon nitride ultrafine powders.The study includes the effect of growth temperature on the defect of whiskers.The results show that the integrity of obtained crystal has related to the growth temperature when whiskers are growing.The relatively integral crystal can only be obtained in a certain range of temperature(1430℃±30 ℃).The growth temperature too high or too low may cause imperfection of the growing crystal and the whiskers with many defects.If the temperature continues to go up,crystalline grain will appear in the whiskers which will become crystalline pillar afterwards.
Keywords:whisker  crystalline pillar  " target="_blank">3N4zz')" href="#">      α-Si3N4
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