Defects introduced into SrTiO3 by auto-feeding epitaxy studied using positron annihilation technique |
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| Authors: | A. Uedono M. Kiyohara K. Shimoyama K. Yamabe T. Ohdaira R. Suzuki T. Mikado |
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| Affiliation: | a Institute of Applied Physics, Center of TARA and Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;b National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan |
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| Abstract: | Vacancy-type defects in SrTiO3 were studied by means of positron annihilation. Thin CeO2 films were grown on SrTiO3 substrates by molecular-beam epitaxy without using an oxidant; oxygen was supplied by diffusion from the substrate. This process is referred as “auto-feeding epitaxy” (AFE). The species of defects introduced into the substrate was found to be not only oxygen vacancies but also Sr-vacancies or their complexes. CeO2 films were grown also on MgO, yttria-stabilized zirconia and sapphire substrates using AFE, and these substrates were characterized by positron annihilation. |
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| Keywords: | Author Keywords: Metal oxide Vacancy SrTiO3 Positron annihilation |
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