Influence of reaction temperature on the formation process of ZnO quantum dots and the optical properties |
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Authors: | Jin-Yan Zhuang Lan Li Xiao-Song Zhang Jian-Ping Xu and Jun Wei |
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Affiliation: | (1) Insititute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, Tianjin Key Laboratory for Optoelectronic Materials and Devices, Tianjin University of Technology, Tianjin, 300384, China;(2) Colloge of Information Science, Tianjin University of Technology, Tianjin, 300384, China;(3) Singapore Institute of Manufacturing Technology, Singapore, 638075, Singapore |
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Abstract: | ZnO quantum dots (QDs)with the sizes of 3.0–5.6 nm are synthesized by solution-phase method at different temperatures. We
find that temperature has great influence on the size of ZnO QDs. The growth process is the most sensitive to temperature,
and the process is well explained by Lifshitz-Slyozov-Wagner (LSW) model. By photoluminescence (PL) spectra of the quantum
dots at different temperatures and reactive time, we come to a conclusion that ultraviolet emission is mainly due to surface
defects, and the origination of green visible emission comes from the transition between the bottom of the conduction band
and the level of O
i.
The work has been supported in part by National Natural Science Foundation of China(Grant No. 60877029), in part by the Tianjin
Natural Science Foundation (Grant No. 07JCYBJC06400 06TXTJJC14600), and in part by the Subject of Science and Technology Development
Fund at University of Tianjin (Grant No. 20071207) |
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Keywords: | |
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