| 多晶硅薄膜晶体管Kink效应研究与建模 |
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| 引用本文： | 陈荣盛,郑学仁,邓婉玲,姚若河,吴朝晖,吴为敬. 多晶硅薄膜晶体管Kink效应研究与建模[J]. 半导体技术, 2008, 33(3): 231-234 |
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| 作者姓名： | 陈荣盛 郑学仁 邓婉玲 姚若河 吴朝晖 吴为敬 |
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| 作者单位： | 华南理工大学,微电子研究所,广州,510640;华南理工大学,微电子研究所,广州,510640;华南理工大学,微电子研究所,广州,510640;华南理工大学,微电子研究所,广州,510640;华南理工大学,微电子研究所,广州,510640;华南理工大学,微电子研究所,广州,510640 |
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| 摘 要： | 多晶硅薄膜晶体管(P-Si TFTs)技术在SOP(system on panel)显示应用中发挥着越来越重要的作用.随着尺寸的不断缩小,P-si TFT 的Kink效应越来越明显,对有源液晶显示矩阵和驱动电路的性能影响很大.对发生Kink效应的物理机制、二雏数值仿真及其一维解析模型进行了分析,讨论了晶粒边界、沟道长度与Kink效应的关系,提出建立适合电路仿真的一维解析模型的关键与展望.
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| 关 键 词： | 多晶硅薄膜晶体管 Kink效应 建模 |
| 文章编号： | 1003-353X（2008）03-0231-04 |
| 收稿时间： | 2007-09-04 |
| 修稿时间： | 2007-09-04 |
Research and Modeling Kink Effect in Poly-Si Thin Film Transistors |
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| Chen Rongsheng,Zheng Xueren,Deng Wanding,Yao Ruohe,Wu Zhaohui,Wu Weijing. Research and Modeling Kink Effect in Poly-Si Thin Film Transistors[J]. Semiconductor Technology, 2008, 33(3): 231-234 |
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| Authors: | Chen Rongsheng Zheng Xueren Deng Wanding Yao Ruohe Wu Zhaohui Wu Weijing |
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| Affiliation: | Chen Rongsheng,Zheng Xueren,Deng Wanling,Yao Ruohe,Wu Zhaohui,Wu Weijing(Institute of Microelectronics,South China University of Technology,Guangzhou 510640,China) |
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| Abstract: | Polysilicon thin film transistors(P-Si TFTs) technology becomes more and more important for display system-on-panel applications,so does Kink effect in scaled-down P-Si TFTs,with significant effect on both active matrix and driving circuit.The physical mechanism,2-D and 1-D analytical models of Kink effect were researched.The relations between grain boundary,channel length and Kink effect were also discussed.The trend key method of 1-D analytical model suitable for circuit simulation were presented. |
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| Keywords: | polysilicon thin film transistor(P-Si TFT) Kink effect modeling |
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