|
|||||
|
|
Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes |
|
| Authors: | Joon-Ho Oh Tae-Yeon Seong H-G Hong Kyoung-Kook Kim S-W Yoon J-P Ahn |
| Affiliation: | 1. Department of Materials Science and Engineering, Korea University, Seoul, 136-713, South Korea 2. Material & Device Center, Samsung Advanced Institute of Technology, Suwon, 440-600, South Korea 3. Department of Nano-Optical Engineering, Korea Polytechnic University, Gyeonggi, 429-793, South Korea 4. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 136-791, South Korea |
| Abstract: | We characterized the electrical and chemical properties of Cu-doped In2O3(CIO) (2.5 nm thick)/Sb-doped SnO2(ATO) (250 nm thick) contacts to p-type GaN by means of current-voltage measurement, scanning transmission electron microscope (STEM) and x-ray photoemission spectroscopy (XPS). The CIO/ATO contacts show ohmic behaviors, when annealed at 530 and 630°C. The effective Schottky barrier heights on diodes made with Ni (5 nm)/Au (5 nm) contacts decrease with increasing annealing temperature. STEM/energy dispersive x-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-Cu-oxide. XPS results show a shift of the surface Fermi level toward the lower binding energy side upon annealing. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |