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Emission of Terahertz Radiation from Two-Dimensional Electron Systems in Semiconductor Nano- and Hetero-Structures |
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| Authors: | Taiichi Otsuji Takayuki Watanabe Amine El Moutaouakil Hiromi Karasawa Tsuneyoshi Komori Akira Satou Tetsuya Suemitsu Maki Suemitsu Eiichi Sano Wojciech Knap Victor Ryzhii |
| Affiliation: | 1. Research Inst. of Electrical Communication, Tohoku University, Sendai, Japan 2. Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan 3. University of Montpellier & Centre National de la Recherche Scientifique, Montpellier, France 4. Computational Nano-Electronics Laboratory, University of Aizu, Aizu-Wakamatsu, Japan |
| Abstract: | This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author??s original interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion. |
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