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Qualitative Evolution of Asymmetric Raman Line-Shape for NanoStructures |
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| Authors: | Rajesh Kumar Gayatri Sahu Shailendra K. Saxena Hari M. Rai Pankaj R. Sagdeo |
| Affiliation: | 1. Discipline of Physics, School of Basic Sciences, Indian Institute of Technology Indore, Indore, Madhya Pradesh-452017, India 2. Disciplne of Surface Science and Engineering, Indian Institute of Technology Indore, Indore, Madhya Pradesh-452017, India 3. Discipline of Bioscience and Bioengineering, Indian Institute of Technology Indore, Indore, Madhya Pradesh-452017, India |
| Abstract: | A qualitative evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is discussed here for application in low dimensional semiconductors. The step-by-step evolution reported here is based on the phonon confinement model which is successfully used in literature to explain the asymmetric Raman line-shape from semiconductor nanostructures. Physical significance of different terms in the theoretical asymmetric Raman line-shape has been explained here. Better understanding of theoretical reasoning behind each term allows one to use the theoretical Raman line-shape without going into the details of theory from first principle. This will enable one to empirically derive a theoretical Raman line-shape function for any material if information about its phonon dispersion relation, size dependence, etc., is known. |
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