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Tunable D peak in gated graphene |
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| Authors: | Anna Ott Ivan A Verzhbitskiy Joseph Clough Axel Eckmann Thanasis Georgiou Cinzia Casiraghi |
| Affiliation: | [1]Physics Departmen t, Freie Universitat Berlin, Berlin 14195, Germany; [2]School of Physics andAstronomy, University of Manchester, ManchesterM 13 9PL, UK; [3]School of Chemistry, University of Manchester, Manchester M 13 9PL, UK |
| Abstract: | We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. |
| Keywords: | graphene gating defects doping electrochemistry |
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