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Temperature dependence of Bi4Ge3O12 photoluminescence spectra |
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| Authors: | Slawomir M Kaczmarek Taiju Tsuboi Yosuke Nakai Marek Berkowski Wei Huang Zbigniew Kowalski |
| Affiliation: | 1. Faculty of Mechanical Engineering and Mechatronics, West Pomeranian University of Technology, Al. Piastów 17, 70-310, Szczecin, Poland 2. Faculty of Engineering, Kyoto Sangyo University, Kyoto, 603-8555, Japan 3. Institute of Advanced Materials, Nanjing University of Technology, Nanjing, 210009, China 4. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 00-908, Warsaw, Poland |
| Abstract: | Bi4Ge3O12 single crystals were obtained using Czochralski growth method. Photoluminescence spectra were analyzed versus temperature from 12 to 295 K. Besides the previously observed emission bands at 610 and 820 nm, the new emission band at 475 nm was found by a careful temperature dependence measurement in the present study. The influence of basic and defect structure on the shape and position of the spectra versus temperature was discussed. |
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