Radiation-resistant free germanium and silicon films for nuclear physics experiments |
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| Authors: | L. A. Matveeva A. V. Vasin G. N. Kozeratskaya Yu. I. Totskii |
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| Affiliation: | (1) Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine |
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| Abstract: | The structure, composition, and radiation resistance of free target films of germanium and silicon prepared under various conditions were studied. Under the experimental conditions encountered in nuclear physics, the targets prepared by pulsed thermal deposition in vacuum are stable for a longer period of time as compared to the samples prepared in a continuous deposition regime. |
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