Low-firable high-K dielectric in the Zrx(Zn1/3Nb2/3)1−xTiO4 ceramic system |
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Authors: | Cheng-Liang Huang Yu-Hua Chien |
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Affiliation: | Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan |
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Abstract: | Composite ceramics in the solid solution of Zrx(Zn1/3Nb2/3)1−xTiO4 (x = 0.1-0.4) have been prepared by the mixed oxide route. Formation of solid solution was confirmed by the X-ray diffraction patterns. The microwave dielectric properties, such as dielectric constant (?r), Q × f value and temperature coefficient of resonant frequency (τf) have been investigated as a function of composition and sintering temperature. With x increasing from 0.1 to 0.4, the dielectric constant decreases from 70.9 to 43.2, and the τf decreases from 105 to 55 ppm/°C. The Q × f value, however, increases with increasing x value to a maximum 26,600 GHz (at 6 GHz) at x = 0.3, and then decreases thereafter. For low-loss microwave applications, a new microwave dielectric material Zr0.3(Zn1/3Nb2/3)0.7TiO4, possessing a fine combination of microwave dielectric properties with a high ?r of 51, a high Q × f of 26,600 GHz (at 6 GHz) and a τf of 70 ppm/°C, is suggested. |
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Keywords: | Crystal growth Dielectric response |
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