Concentration-dependent behavior of hydrogen in Al-doped ZnO thin films |
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| Authors: | Lin ZhaoGuang-Jie Shao Xiu-Juan Qin Si-Hui-Zhi Han |
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| Affiliation: | a College of Environmental and Chemical Engineering, Yanshan University, 438 Hebei Street, Qinhuangdao 066004, Hebei, China
b State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 438 Hebei Street, Qinhuangdao 066004, Hebei, China |
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| Abstract: | The Al-doped ZnO thin films were synthesized by aerosol-assisted chemical vapor deposition. The concentration-dependent behavior of hydrogen in the films was discussed, finding that as hydrogen is introduced at a relatively low level, it tends to take the oxygen vacancy site and form a hydrogen-oxygen vacancy complex which behaves as a shallow donor, on the other hand it reduces the solubility of the substitutional Al; then higher hydrogen concentration results in the formation of H2 neutral molecular complex. |
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| Keywords: | Hydrogen Concentration Behavior Al-doped ZnO thin films |
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