Specific contact resistivity of InGaAs/InP p-isotype heterojunctions |
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| Authors: | Wasserbauer J.G. Bowers J.E. Hafich M.J. Silvestre P. Woods L.M. Robinson G.Y. |
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| Affiliation: | California Univ., Santa Barbara, CA, USA; |
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| Abstract: | The specific contact resistivity of lattice matched InGaAs/InP p-isotype heterojunction has been measured through the use of an interface transmission line model structure. The measured resistance values are comparable to or greater than those of the metal/semiconductor interface and depend heavily on the doping and the abrupt or graded nature of the interface.<> |
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