Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity |
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| Authors: | Zhengmao Ye Campbell JC Zhonghui Chen Eui-Tae Kim Madhukar A |
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| Affiliation: | Microelectron. Res. Center, Texas Univ., Austin, TX; |
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| Abstract: | An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 /spl mu/m. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 10/sup 10/ cm/spl middot/Hz/sup 1/2//W. |
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