Annealing effects of a high-quality ZnTe substrate |
| |
| Authors: | Kenji Yoshino Minoru Yoneta Kenzo Ohmori Hiroshi Saito Masakazu Ohishi Takayuki Yabe |
| |
| Affiliation: | (1) Department of Electrical and Electronic Engineering, Miyazaki University, 889-2192 Miyazaki, Japan;(2) Department of Applied Physics, Okayama University of Science, 700-0005 Okayama, Japan;(3) Innovative Materials Development Center, Nikko Materials Co. Ltd., 335-8502 Saitama, Japan |
| |
| Abstract: | The sharp photoluminescence (PL) and optical-reflection spectra in the bandedge region of the high-quality nondoped ZnTe substrate
(100) were observed at 4.2 K. Free exciton, associated with lower and upper polaritons (EXL and EXU) at 2.382 eV and 2.381 eV, respectively, were clearly observed. This meant that this substrate was high quality. The intensity
of a bound exciton peak (2.375 eV), which is caused by a Zn vacancy, of a neutral acceptor decreased with an increase of the
Zn vapor pressures. |
| |
| Keywords: | ZnTe substrates annealing |
| 本文献已被 SpringerLink 等数据库收录！ |
|
