| MoO3掺杂对BiNbO4陶瓷微波介电性能的影响 |
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| 引用本文： | 毛羽,丁士华,张良莹,姚熹. MoO3掺杂对BiNbO4陶瓷微波介电性能的影响[J]. 电子元件与材料, 2005, 24(6): 12-14 |
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| 作者姓名： | 毛羽 丁士华 张良莹 姚熹 |
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| 作者单位： | 同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092;同济大学功能材料研究所,上海,200092 |
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| 基金项目： | 国家高技术研究发展计划(863计划);国家重点基础研究发展计划(973计划);上海市学科建设项目 |
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| 摘 要： | 采用固相反应法,研究了MoO3掺杂对BiNbO4陶瓷微结构、烧结特性和微波介电性能的影响。对相对介电常数εr和品质因数Q随烧结温度的变化以及谐振频率温度系数随MoO3掺杂量的变化也进行了研究。MoO3的掺杂量x低于0.05时,实现了BiNbO4陶瓷在970℃以下的低温烧结,并且相转变温度也降低了约60℃。通过对εr以及介质损耗随温度的变化特性的研究,证实了缺陷偶极子对材料介电性能的影响。
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| 关 键 词： | 无机非金属材料 微波介质陶瓷 介电性能 掺杂 缺陷偶极子 |
| 文章编号： | 1001-2028(2005)06-0012-03 |
Effect of Doping MoO3 on Microwave Dielectric Properties of BiNbO4 Ceramics |
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| MAO Yu,DING Shi-hua,ZHANG Liang-ying,YAO Xi. Effect of Doping MoO3 on Microwave Dielectric Properties of BiNbO4 Ceramics[J]. Electronic Components & Materials, 2005, 24(6): 12-14 |
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| Authors: | MAO Yu DING Shi-hua ZHANG Liang-ying YAO Xi |
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| Abstract: | Investigated were microstructure, sintering behavior and microwave dielectric properties of BiNbO4 ceramics doped MoO3 by solid phase reaction method. Variations of dielectric constant εr, Q value with sintering temperature and that of temperature coefficient of resonator frequency with the content of MoO3 were investigated too. The doping amount of MoO3 did not surpass 5 mol%. BiNbO4 ceramics are sintered below 970℃ and its phase transition temperature is also lowered 60℃. Effect of defect dipoles on dielectric properties is approved by investigation of temperature dependence of dielectric constant εr and dielectric loss. |
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| Keywords: | inorganic non-metallic materials microwave dielectric ceramics dielectric properties doping defect dipoles |
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