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Impact of surface phase coexistence on the development of step-free areas on Si(111)
Authors:Andreas FISSEL  Ayan Roy CHAUDHURI  Jan KRÜGENER  Philipp GRIBISCH  H Jörg OSTEN
Affiliation:Institute of Electronic Materials and Devices, Leibniz University Hannover, Schneiderberg 32, 30167 Hannover, Germany
Abstract:The step-flow growth condition of Si on Si(111) near the (7×7)-"1×1" surface phase transition temperature TC are analyzed within the framework of Burton--Cabrera--Frank theory. In particular, coexistence of both surface phases well below TC and their specific influence on the step-flow growth behavior are considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7×7) phase separates into domains surrounded by "1×1" areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7×7), resulting in much larger critical terrace width for nucleation.
Keywords:molecular beam epitaxy  step-flow growth mode  surface superstructure  silicon  
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