Impact of surface phase coexistence on the development of step-free areas on Si(111) |
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Authors: | Andreas FISSEL Ayan Roy CHAUDHURI Jan KRÜGENER Philipp GRIBISCH H Jörg OSTEN |
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Affiliation: | Institute of Electronic Materials and Devices, Leibniz University Hannover, Schneiderberg 32, 30167 Hannover, Germany |
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Abstract: | The step-flow growth condition of Si on Si(111) near the (7×7)-"1×1" surface phase transition temperature TC are analyzed within the framework of Burton--Cabrera--Frank theory. In particular, coexistence of both surface phases well below TC and their specific influence on the step-flow growth behavior are considered. We presume that under dynamical condition of growth, the surface initially covered by only the (7×7) phase separates into domains surrounded by "1×1" areas. On such a surface, the overall supersaturation should be reduced drastically compared to a surface with only (7×7), resulting in much larger critical terrace width for nucleation. |
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Keywords: | molecular beam epitaxy step-flow growth mode surface superstructure silicon |
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