Electrical properties of MOSFET's with N2O-nitridedLPCVD SiO2 gate dielectrics |
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Authors: | Ahn J. Kwong D.-L. |
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Affiliation: | Texas Univ., Austin, TX; |
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Abstract: | Electrical properties of MOSFETs with gate dielectrics of low-pressure chemical-vapor-deposited (LPCVD) SiO2 nitrided in N2O ambient are compared to those with control thermal gate oxide. N2O nitridation of CVD oxide, combines the advantages of interfacial oxynitride growth and the defectless nature of CVD oxide. As a result, devices with N2O-nitrided CVD oxide show considerably enhanced performance (higher effective electron mobility), improved reliability (reduced charge trapping, interface state generation, and transconductance degradation), and better time-dependent dielectric breakdown (TDDB) properties (tBD ) compared to devices with control thermal oxide |
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