Epitaxial Growth and Luminescent Properties of Mn2+-Activated ZnGa2O4 Films |
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Authors: | Yong Eui Lee David P Norton John D Budai Christopher M Rouleau Jae-Won Park |
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Affiliation: | (1) Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831-6056 |
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Abstract: | The epitaxial growth and properties of Mn2+-doped ZnGa2O4 thin films on various single crystal substrates using pulsed laser deposition were investigated. Control of Zn/Ga stoichiometry required the use of a mosaic ZnGa2O4/ZnO ablation target to compensate for Zn loss due to evaporation. The photoluminescent intensity was a strong function of the Zn/Ga ratio, and also correlated with changes in the surface morphology. Superior photoluminescent intensity was attained from slightly Zn-deficient films which exhibit distinctive worm-like surface features. Enhanced photoluminescent intensity was observed in epitaxial films as compared to randomly-oriented polycrystalline deposits on glass substrates, suggesting an adverse effect of grain boundaries on luminescence properties. |
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Keywords: | pulsed laser deposition luminescence epitaxial ZnGa2O:4Mn thin-film phosphors |
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