| N-型ZnSe:Cl的分子束外延生长 |
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| 引用本文： | 陈云良,崔捷,沈爱东,屠玉珍,王海龙. N-型ZnSe:Cl的分子束外延生长[J]. 量子电子学报, 1993, 0(1) |
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| 作者姓名： | 陈云良 崔捷 沈爱东 屠玉珍 王海龙 |
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| 作者单位： | 中国科学院上海光学精密机械研究所 201800(陈云良，崔捷，沈爱东，屠玉珍)，中国科学院上海光学精密机械研究所 201800(王海龙) |
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| 基金项目： | 国家自然科学基金，国家863青年基金 |
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| 摘 要： | 本文报道利用分子束外延(MBE)技术,采用高纯ZnCl_2作掺杂源,成功地进行了n—型ZnSe:Cl的分子束外延生长。n-ZnSe:Cl/p-GaAs异质结构的伏-安(I—V)特性和热探针测试显示外延层呈n型导电特性。反射高能电子衍射(RHEED)和x射线衍散谱测量表明ZnSe:Cl外延层具有较好的晶体质量。
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| 关 键 词： | 硒化锌(ZnSe) 分子束外延 |
Growth of N-Type ZnSe: Cl Layers by Molecular Beam Epitaxy |
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| Chen Yunliang,Cui Jie,Shen Aidong,Tu Yuzheng,Wang Hailong. Growth of N-Type ZnSe: Cl Layers by Molecular Beam Epitaxy[J]. Chinese Journal of Quantum Electronics, 1993, 0(1) |
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| Authors: | Chen Yunliang Cui Jie Shen Aidong Tu Yuzheng Wang Hailong |
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| Affiliation: | Chen Yunliang,Cui Jie,Shen Aidong,Tu Yuzheng,Wang Hailong Shanghai Institute of Optics and Fine Mechanice,Academia Sinica,201800 |
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| Abstract: | High-quality n-type ZnSe layers have been successfully grown on (100) GaAssubstrates by molecular beam epitaxy using ZnCl_2 as the doping material. Then-type conduction has been confirmed by the current-voltage characteristics ofCl-doped ZnSe heterojunctions formed on GaAs substrates. The RHEED patternswere observed, indicating good crystalline quality. The analysis of x-ray dif-fraction shows that the Cl-doped ZnSe layers is perfect. |
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| Keywords: | ZnSe molecular beam epitaxy |
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