Improvement in Performance of Carbon Nanotube Field-Effect Transistors on Patterned SiO2/Si Substrates |
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Authors: | Kenzo Maehashi Shin Iwasaki Yasuhide Ohno Takaomi Kishimoto Koichi Inoue Kazuhiko Matsumoto |
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Affiliation: | (1) Institute for Microelectronics, TU Wien, Guβhausstraβe 27–29/E360, 1040 Wien, Vienna, Austria |
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Abstract: | Horizontally aligned single-walled carbon nanotubes (SWNTs) were fabricated on patterned SiO2/Si substrates with groove-and-terrace structures, which were obtained using electron-beam lithography and reactive ion etching. Scanning electron microscopy observation revealed that SWNTs were aligned in the direction parallel to the groove-and-terrace structures and were preferentially grown along the edges of terraces. Using aligned SWNTs as multichannels, carbon nanotube field-effect transistors (CNTFETs) were fabricated on the patterned SiO2/Si substrates. This method will be promising to control the direction of SWNTs on SiO2/Si substrates for fabrication of high-performance CNTFETs with high current outputs. |
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