Application of elastic mid-infrared light scattering to the investigation of internal gettering in Czochralski-grown silicon

The influence of the internal gettering process on the large-scale defects in Czochralski-grown boron-doped single-crystal silicon is investigated by low-angle mid-infrared light scattering. The large-scale defects in the as-grown material and crystals subjected to the internal gettering procedure are classified. The applicability of low-angle light scattering in laboratory investigations and in the industrial inspection of the operations in an internal gettering production cycle is demonstrated. Fiz. Tekh. Poluprovodn. 31, 1158–1163 (October 1997)