Comparison of current-voltage characteristics of n- and p-type 6H-SiC Schottky diodes |
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Authors: | Q. Zhang V. Madangarli M. Tarplee T. S. Sudarshan |
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Affiliation: | (1) Department of Electrical Engineering, University of South Carolina, 29208 Columbia, SC |
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Abstract: | Current-voltage (I–V) characteristics of n- and p-type 6H−SiC Schottky diodes are compared in a temperature range of room temperature to 400°C. While the room temperature I–V characteristics of the n-type Schottky diode after turn-on is more or less linear up to ∼100 A/cm2, the I–V characteristics of the p-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (>125 A/cm2) the forward voltage drop across p-type Schottky diodes is lower than that across n-type Schottky diodes on 6H−SiC. High temperature measurements indicate that while the on-state resistance of n-type Schottky diodes increases with increase in temperature, the on-state resistance of p-type Schottky diodes decreases with increase in temperature up to ∼330 K. |
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Keywords: | 6H− SiC Schottky diodes I– V characteristics |
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