Photosensitivity of heterostructures based on finely ground semiconductor phases

A new type of heterostructure is suggested and developed. The heterostructures are based on the direct contact of a bulk semiconductor with a dielectric layer in which a finely ground semiconductor phase is dispersed. In Si-and GaAs-based heterostructures of this type, rectification and photovoltaic effects are observed. It is shown that illumination of such structures so that the side of the dielectric layer with the built-in finely ground semiconductor phase is exposed to light induces a broadband photovoltaic effect deep within the fundamental absorption band of the bulk semiconductor.