| n型GaAs MESFET沟道特性的研究 |
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| 引用本文： | 顾成余,毛友德,夏冠群,赵建龙.n型GaAs MESFET沟道特性的研究[J].半导体技术,1999,24(2):13-15. |
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| 作者姓名： | 顾成余 毛友德 夏冠群 赵建龙 |
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| 作者单位： | 1. 合肥工业大学,合肥,230009
2. 中国科学院上海冶金研究所,上海,200233 |
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| 摘 要： | 报道了ｎ型ＧａＡｓ ＭＥＳＦＥＴ漏源电流Ｉｄｓ和栅源电压Ｖｇｓ间的关系，发现在负栅压状态下，沟道特性分四个区域：过调制区、线性调制区、过渡区和夹断区，并且零栅压饱和漏源电流大的器件线性调制区的范围较大，过渡区的范围较小。
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| 关 键 词： | 沟道特性 器件 |
| 修稿时间： | 19980413 |
Research on the Channel Characteristic of n-GaAs MESFET |
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| Gu Chengyu,Mao Youde,Xia Guanqun,Zhao Jianlong.Research on the Channel Characteristic of n-GaAs MESFET[J].Semiconductor Technology,1999,24(2):13-15. |
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| Authors: | Gu Chengyu Mao Youde Xia Guanqun Zhao Jianlong |
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| Abstract: | We report the relationship between the drain to source current( I ds )and the gate to source voltage( V gs )of GaAs MESFETs,and find the channel characteristic can be divided into four regions:over modulated region,linear modulated region,passage region and pinch off region when the gate voltage is negative.The linear modulated region becomes longer,the passage region becomes shorter along with the saturation current between drain and source rising when the gate voltage is zero. |
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| Keywords: | GaAs |
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