| 高补偿硅的光敏感特性 |
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| 引用本文： | 张建,巴维真,陈朝阳,丛秀云,陶明德,M·K·巴哈迪尔哈诺夫.高补偿硅的光敏感特性[J].电子元件与材料,2004,23(3):20-22. |
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| 作者姓名： | 张建 巴维真 陈朝阳 丛秀云 陶明德 M·K·巴哈迪尔哈诺夫 |
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| 作者单位： | 中国科学院新疆理化技术研究所,新疆,乌鲁木齐,830011;塔什干国立技术大学,乌孜别克斯坦,塔什干,700095 |
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| 基金项目： | 国家外国专家局科研基金资助项目(20036500065)，中国科学院西部之光人才培养科研基金资助项目 |
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| 摘 要： | 对电阻率为5 ·cm的p型单晶硅,在高温条件下采用扩散金属锰的方法,得到高补偿硅。并在室温(25℃)和液氮温度(196℃)下,测试了这种高补偿硅材料对光强的敏感性。测试结果表明:这种材料是一种光敏感材料,其敏感性受外加的电压、样品的温度及补偿后样品的电阻率影响。
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| 关 键 词： | p型单晶硅 掺杂锰 高补偿硅 光敏感特性 |
| 文章编号： | 1001-2028(2004)03-0020-03 |
Highly Compensated Si:Light-Sensitive Characteristic |
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| ZHANG Jian,BA Wei-zhen,CHEN Zhao-yang,CONG Xiu-yun,TAO Ming-de,M.K.Bahadierhanov.Highly Compensated Si:Light-Sensitive Characteristic[J].Electronic Components & Materials,2004,23(3):20-22. |
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| Authors: | ZHANG Jian BA Wei-zhen CHEN Zhao-yang CONG Xiu-yun TAO Ming-de MKBahadierhanov |
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| Affiliation: | ZHANG Jian1,BA Wei-zhen1,CHEN Zhao-yang1,CONG Xiu-yun1,TAO Ming-de1,M.K.Bahadierhanov2 |
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| Abstract: | Highly compensated Si were acquired by diffusing Mn into p-type silicon crystal of 5 W·cm at high temperature.Its light-sensitive characteristic was measured at 25C and 196C. The measurement results show that obtained materials are sensitive to light and the sensitivity is affected by applied voltage, sample temperature and their resistivity. |
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| Keywords: | p-type silicon Mn-doping highly compensated silicon light-sensitive characteristic |
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