| 外延GaN基薄膜表面晶体结构RHEED图像研究 |
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| 引用本文： | 郎佳红,秦福文,顾彪. 外延GaN基薄膜表面晶体结构RHEED图像研究[J]. 半导体技术, 2006, 31(8): 579-582,587 |
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| 作者姓名： | 郎佳红 秦福文 顾彪 |
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| 作者单位： | 安徽工业大学,电气信息学院,安徽,马鞍山,243002;大连理工大学,三束材料改性国家重点实验室,辽宁,大连,116024 |
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| 基金项目： | 安徽省高校青年教师科研项目 |
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| 摘 要： | 论述了反射高能电子衍射(RHEED)作为外延薄膜进行原位监测的一个重要手段以及RHEED图像与外延薄膜的表面形貌的关系,提出了以RHEED图像分析外延GaN基薄膜晶格结构的演变情况,并从衬底α-Al2O3的等离子体清洗、氮化进行了具体的分析和演算.结论指出,RHEED不仅是进行外延薄膜原位监测,而且还可以作为分析外延薄膜晶体结构演变的一个有力手段.
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| 关 键 词： | 蓝宝石 清洗 氮化 反射高能电子衍射 |
| 文章编号： | 1003-353X（2006）08-0579-04 |
| 收稿时间： | 2006-03-07 |
| 修稿时间： | 2006-03-07 |
Study of Surface Lattice Transform of Epitaxial GaN-Based Films by Using RHEED |
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| LANG Jia-hong,QIN Fu-wen,GU Biao. Study of Surface Lattice Transform of Epitaxial GaN-Based Films by Using RHEED[J]. Semiconductor Technology, 2006, 31(8): 579-582,587 |
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| Authors: | LANG Jia-hong QIN Fu-wen GU Biao |
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| Abstract: | Based on the relation to images of RHEED for situ monitoring growth of GaN-based epitaxy film and surface feature of epitaxy film, the transformation of the crystal lattice of growing surface of epitaxy film from RHEED images in different processes, such as hydrogen-nitrogen plasma cleaning and nitridation of sapphire substrate was given. The result indicated that RHEED was advance for monitoring the growth of epitaxy film in situ, but also was a strongly tool for analyzing the crystal lattice transformation of epitaxy film. |
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| Keywords: | sapphire cleaning nitridation RHEED |
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