Nitride-based LEDs with an SPS tunneling contact Layer and an ITO transparent contact |
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| Authors: | SJ Chang CS Chang YK Su RW Chuang WC Lai CH Kuo YP Hsu YC Lin SC Shei HM Lo JC Ke JK Sheu |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Taman, Taiwan; |
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| Abstract: | The indium-tin-oxide ITO(80 nm)] and Ni(5 nm)-Au(10 nm) films were separately deposited on glass substrates, p-GaN layers, n/sup +/-InGaN-GaN short-period-superlattice (SPS) structures, and nitride-based light-emitting diodes (LEDs). It was found that ITO on n/sup +/-SPS structure could provide us an extremely high transparency (i.e., 93.2% at 465 nm) and also a reasonably small specific contact resistance of 1.6/spl times/10/sup -3//spl Omega//spl middot/cm/sup 2/. Although the forward voltage which corresponds to 20-mA operating current for LED with ITO on n/sup +/-SPS upper contact was slightly higher than that of the LED with Ni-Au on n/sup +/-SPS upper contact, a 30% higher output intensity could still be achieved by using ITO on n/sup +/-SPS upper contact. Moreover, the output power of packaged LED with ITO was about twice as large as that of the other conventional Ni-Au LEDs. |
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