| CVD金刚石膜场致发射的机理 |
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| 引用本文： | 雷青松. CVD金刚石膜场致发射的机理[J]. 真空与低温, 2003, 9(2): 76-80 |
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| 作者姓名： | 雷青松 |
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| 作者单位： | 兰州物理研究所,甘肃,兰州,730000 |
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| 摘 要： | 金刚石膜场致发射过程是电子从导电基底开始,经基底/金刚石界面、金刚石薄膜体内传输到表面,然后穿过表面势垒进入真空、经真空电场加速到达阳极的一个复杂过程。对该过程进行了较为详细的分析和介绍。
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| 关 键 词： | 场致发射 电子亲合势 势垒 |
| 文章编号： | 1006-7086(2003)02-0076-05 |
| 修稿时间： | 2003-03-19 |
THE FIELD EMISSION MECHANISM OF CVD DIAMOND FILM |
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| LEI Qing-song. THE FIELD EMISSION MECHANISM OF CVD DIAMOND FILM[J]. Vacuum and Cryogenics, 2003, 9(2): 76-80 |
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| Authors: | LEI Qing-song |
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| Abstract: | The field emission of diamond film involves the electrons travel from the negative end of the power supply, through the various interfacial contacts, through the bulk of the film itself, to the film surface,then tunnel through the potential barrier,propagate through the vacuum gap, before finally reaching the anode. The mechanism is analyzed and introduced.; |
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| Keywords: | field emission Electron affinity barrier |
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