| GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现 |
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| 引用本文： | 孙元平,张泽洪,赵德刚,冯志宏,付羿,张书明,杨辉. GaAs吸收衬底生长的立方相GaN发光二极管的工艺设计与实现[J]. 半导体学报, 2002, 23(9): 1001-1005. DOI: 10.3969/j.issn.1674-4926.2002.09.020 |
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| 作者姓名： | 孙元平 张泽洪 赵德刚 冯志宏 付羿 张书明 杨辉 |
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| 作者单位： | 中国科学院半导体研究所,集成光电子学国家重点实验室,北京,100083 |
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| 基金项目： | 国家自然科学基金;69825107; |
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| 摘 要： | 利用光学薄膜原理,计算了采用晶片键合技术来提高以GaAs为衬底的立方相GaN的出光效率的理论可行性.以Ni为粘附层,Ag为反射层的Ni/Ag/Au薄膜体系可以使立方GaN的出光效率从理论上提高2.65倍左右.实验结果证实,利用键合方法实现的以Ni/Ag/Au作为反射膜的样品的光反射率比未做键合的GaN/GaAs样品的光反射率在理论计算的459.2nm处提高了2.4倍.
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| 关 键 词： | 立方相GaN 晶片键合 工艺设计 |
| 文章编号： | 0253-4177(2002)09-1001-05 |
| 修稿时间： | 2001-12-28 |
Design of High Brightness Cubic-GaN LED Grown on GaAs Substrate |
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| Sun Yuanping,Zhang Zehong,Zhao Degang,Feng Zhihong,Fu Yi,Zhang Shuming and Yang Hui. Design of High Brightness Cubic-GaN LED Grown on GaAs Substrate[J]. Chinese Journal of Semiconductors, 2002, 23(9): 1001-1005. DOI: 10.3969/j.issn.1674-4926.2002.09.020 |
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| Authors: | Sun Yuanping Zhang Zehong Zhao Degang Feng Zhihong Fu Yi Zhang Shuming Yang Hui |
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| Abstract: | The feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by using wafer bonding technique is calculated by the principles of optical thin films.The light extraction efficiency can be improved by 2 65 times when a thin Ni layer is used as an adhesive layer and Ag layer as a reflective layer.Experimental results show that the reflectivity at 459 2nm of the bonded samples is improved by 2 4 times than the as grown samples. |
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| Keywords: | cubic GaN wafer bonding design process |
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