| 硅光敏管内量子效率与硅的能带结构 |
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| 引用本文： | 胡东红 张玲 张明. 硅光敏管内量子效率与硅的能带结构[J]. 光电子技术, 1997, 17(2): 98-101 |
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| 作者姓名： | 胡东红 张玲 张明 |
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| 作者单位： | 湖北大学物理系!武汉430062 |
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| 摘 要： | 讨论了硅光管敏管内量子效率与硅的能带结构、硅的光吸收系数的关系，认为在硅光敏管PN结实现100％收集载流子的情况下，内量子效率曲线在一定程度上反映了硅的能带结构、能态密度。
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| 关 键 词： | 能带结构 光敏管 量子效率 态密度 光吸收系数 能态 载流子 PN结 |
Quantum Efficiency in Silicon Photodiode and Band Structure of Silicon |
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| Hu Donghong, Zhang Ling, Zhang Ming. Quantum Efficiency in Silicon Photodiode and Band Structure of Silicon[J]. Optoelectronic Technology, 1997, 17(2): 98-101 |
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| Authors: | Hu Donghong Zhang Ling Zhang Ming |
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| Abstract: | The relations between the quantum efficiency in silicon photodiode and the electronic structure and absorption coefficient of silicon are discussed. The quantum effi-ciency in a UV sensitive silicon photodiode whose pn-junction could collect all the minority carries can somewhat respond to the electronic structure and the electronic density of stites in silicon. |
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| Keywords: | semiconductor photodiode band structure |
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