Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography |
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Authors: | Guangyu Liu Hongping Zhao Jing Zhang Joo Hyung Park Luke J Mawst Nelson Tansu |
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Affiliation: | (1) Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, USA;(2) Reed Center for Photonics, Department of Electrical and Computer Engineering, University of Wisconsin - Madison, Madison, WI 53706, USA |
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Abstract: | Highly uniform InGaN-based quantum dots (QDs) grown on a nanopatterned dielectric layer defined by self-assembled diblock
copolymer were performed by metal-organic chemical vapor deposition. The cylindrical-shaped nanopatterns were created on SiN
x
layers deposited on a GaN template, which provided the nanopatterning for the epitaxy of ultra-high density QD with uniform
size and distribution. Scanning electron microscopy and atomic force microscopy measurements were conducted to investigate
the QDs morphology. The InGaN/GaN QDs with density up to 8 × 1010 cm-2 are realized, which represents ultra-high dot density for highly uniform and well-controlled, nitride-based QDs, with QD
diameter of approximately 22-25 nm. The photoluminescence (PL) studies indicated the importance of NH3 annealing and GaN spacer layer growth for improving the PL intensity of the SiN
x
-treated GaN surface, to achieve high optical-quality QDs applicable for photonics devices. |
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