Scanning tip measurement for identification of point defects |
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Authors: | László Dózsa György Molnár Vito Raineri Filippo Giannazzo János Ferencz Štefan Lányi |
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Affiliation: | 1.Research Institute for Technical Physics and Materials Sciences,Budapest,Hungary;2.CNR-IMM,Catania,Italy;3.Institue of Physics, Slovakian Academy of Sciences,Bratislava,Slovakia |
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Abstract: | Self-assembled iron-silicide nanostructures were prepared by reactive deposition epitaxy of Fe onto silicon. Capacitance-voltage,
current-voltage, and deep level transient spectroscopy (DLTS) were used to measure the electrical properties of Au/silicon
Schottky junctions. Spreading resistance and scanning probe capacitance microscopy (SCM) were applied to measure local electrical
properties. Using a preamplifier the sensitivity of DLTS was increased satisfactorily to measure transients of the scanning
tip semiconductor junction. In the Fe-deposited area, Fe-related defects dominate the surface layer in about 0.5 μm depth.
These defects deteriorated the Schottky junction characteristic. Outside the Fe-deposited area, Fe-related defect concentration
was identified in a thin layer near the surface. The defect transients in this area were measured both in macroscopic Schottky
junctions and by scanning tip DLTS and were detected by bias modulation frequency dependence in SCM. |
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