|
|||||
|
|
| Si掺杂对缺陷诱导的GaN磁性的影响 | |
| 引用本文： | 张蕾,邢怀中,黄燕,张会媛,王基庆. Si掺杂对缺陷诱导的GaN磁性的影响[J]. 红外与毫米波学报, 2011, 30(3): 229-233 |
| 作者姓名： | 张蕾 邢怀中 黄燕 张会媛 王基庆 |
| 作者单位： | 1. 东华大学应用物理系,上海,201620 2. 中国科学院上海技术物理研究所国家红外物理室,上海,200083 3. 华东师范大学电子工程系,上海,200241 |
| 摘 要： | 利用第一性原理局域密度自旋近似方法,研究了缺陷诱导的GaN的内禀磁性以及Si掺杂对缺陷GaN磁性的影响.研究发现缺陷诱导GaN的内禀磁矩为3μB,Si掺杂后缺陷诱导的GaN磁矩发生淬灭为2μB.随Si含量的增加磁矩进一步减少.该理论结果对实验有指导意义. |
| 关 键 词： | GaN:Si 第一性原理 磁性 |
| 收稿时间： | 2010-08-30 |
| 修稿时间： | 2010-11-14 |
The effect of Si co-doping on defect-induced intrinsic magnetism in GaN |
|
| ZHANG Lei,XING Huai-Zhong,HUANG Yan,ZHANG Hui-Yuan and WANG Ji-Qing. The effect of Si co-doping on defect-induced intrinsic magnetism in GaN[J]. Journal of Infrared and Millimeter Waves, 2011, 30(3): 229-233 | |
| Authors: | ZHANG Lei XING Huai-Zhong HUANG Yan ZHANG Hui-Yuan WANG Ji-Qing |
| Affiliation: | Donghua University |
| Abstract: | Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect. It is found that defect induced intrinsic magnetic moment of GaN is 3 , while the magnetic moment is quenched to 2 in Si co-doping GaN:Si. The moment decreases with increasing of the concentration of Si. The result is very helpful for experiment. |
| Keywords: | GaN:Si the first principles magnetism |
| 本文献已被 万方数据 等数据库收录！ | |
| 点击此处可从《红外与毫米波学报》浏览原始摘要信息 | |
| 点击此处可从《红外与毫米波学报》下载全文 | |