钝化界面植氢优化的碲镉汞中波红外探测芯片

报道了在钝化界面进行低能等离子体植氢优化的n+-on-p碲镉汞(HgCdTe)中波(MW,mid-wavelength)光伏红外探测芯片的研究成果.基于由采用分子束外延技术生长的HgCdTe薄膜材料,通过注入阻挡层的生长、注入窗口的光刻、形成光电二极管的B+注入、钝化介质膜的生长、优化钝化界面的等离子体植氢、金属化和铟...

HgCdTe mid wavelength infrared detector with interface passivated by hydrogen implantation

The results of n+-on-p HgCdTe mid-wavelength infrared detector with passivation interface optimized using high-density hydrogen plasma implantation were presented in this paper. By implantation barrier layer deposition, ion-implantation window exposure, B+ implantation, passivation film deposition, plasma hydrogen-implantation, metallization and indium-bump arrays fabrication, n+-on-p HgCdTe mid-wavelength infrared detector with passivation interface optimized was achieved from a Hg1-xCdxTe film grown by MBE. Cut-in voltages of HgCdTe mid-wavelength detector Photodiodes with interface optimized were 50mV approximately larger than those of the one without having been optimized, dynamic resistances among the zero bias and reverse bias region were improved 10 times and dynamic resistances among the larger forward region were decreased significantly. Thus, it is obvious that plasma hydrogen-implantation was beneficial to suppress the dark currents and improve the ohmic contact of HgCdTe mid-wavelength infrared detector photodiodes, and then to enhance the operating dynamic range and performance uniformity.