Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250/spl deg/C to 280/spl deg/ C |
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Authors: | Long K. Kattamis A.Z. Cheng I.-C. Gleskova H. Wagner S. Sturm J.C. |
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Affiliation: | Dept. of Electr. Eng., Princeton Univ., NJ, USA; |
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Abstract: | Amorphous-silicon (a-Si) thin-film transistors (TFTs) were fabricated on a free-standing new clear plastic substrate with high glass transition temperature (T/sub g/) of >315/spl deg/ C and low coefficient of thermal expansion of <10 ppm/ /spl deg/ C. Maximum process temperatures on the substrates were 250/spl deg/C and 280/spl deg/C, close to the temperatures used in industrial a-Si TFT production on glass substrates. The first TFTs made at 280/spl deg/C have dc characteristics comparable to TFTs made on glass. The stability of the 250/spl deg/C TFTs on clear plastic is approaching that of TFTs made on glass at 300/spl deg/C-350/spl deg/C. TFT characteristics and stability depend only on process temperature and not on substrate type. |
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