| 由背面工艺导致的3.3-kV NPT-IGBT阳极注入效率降低效应的实验研究 |
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| 引用本文： | 蒋华平,张波,刘闯,陈万军,饶祖刚,董彬.由背面工艺导致的3.3-kV NPT-IGBT阳极注入效率降低效应的实验研究[J].半导体学报,2012,33(2):024003-4. |
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| 作者姓名： | 蒋华平 张波 刘闯 陈万军 饶祖刚 董彬 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室 |
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| 基金项目： | Project supported by the Major Specialized Program of National Science and Technology, China (No. 2011ZX02706-003). |
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| 摘 要： | The anode injection efficiency reduction of 3.3-kV-class non-punch-through insulated-gate bipolar transistors (NPT-IGBTs) due to backside processes is experimentally studied through comparing the forward blocking capabilities of the experiments and the theoretical breakdown model in this paper. Wafer lifetimes are measured by a μ-PCD method, and well designed NPT-IGBTs with a final wafer thickness of 500 μm are fabricated. The test results show higher breakdown voltages than the theoretical breakdown model in which anode injection efficiency reduction is not considered. This indicates that anode injection efficiency reduction must be considered in the breakdown model. Furthermore, the parameters related to anode injection efficiency reduction are estimated according to the experimental data.
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| 关 键 词： | NPT-IGBT 注入效率 模型实验 核武器 阳极 背面 扩散 绝缘栅双极晶体管 |
| 收稿时间： | 7/29/2011 7:36:22 PM |
| 修稿时间： | 9/27/2011 7:08:00 PM |
Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes |
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| Jiang Huaping,Zhang Bo,Liu Chuang,Chen Wanjun,Rao Zugang and Dong Bin.Experimental study of the anode injection efficiency reduction of 3.3-kV-class NPT-IGBTs due to backside processes[J].Chinese Journal of Semiconductors,2012,33(2):024003-4. |
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| Authors: | Jiang Huaping Zhang Bo Liu Chuang Chen Wanjun Rao Zugang and Dong Bin |
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| Affiliation: | State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China;State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China |
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| Abstract: | |
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| Keywords: | non-punch-through IGBT anode injection efficiency reduction breakdown voltage |
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