Electrical resistance drift of molybdenum silicide thin film temperature sensors

For a thermometer to be of practical use, its accuracy of temperature indication must be within a tolerable range. In this paper, patterned molybdenum disilicide (MoSi₂) thin film temperature sensors were fabricated to study their thermoresistance, i.e. resistance vs. temperature (R-T) characteristics. The R-T characteristic of MoSi₂ thin films exhibits a positive deviation from linearity (termed “superlinearity”) instead of showing a simple linearity as for most metals. This superlinear behavior was attributed to thermal expansion and the consequent decrease in the Debye characteristic temperature of MoSi₂. For long-term duration at elevated temperatures, the variation in thickness and composition of the sensor film due to oxidation and other factors may produce drift in the electrical resistance. In this study, the electrical resistance drifts of the sensors as a function of time at temperatures of 1200, 1300 and 1350 °C are presented. For the sensor film tested at 1300 °C, the resistance drift due to the thickness change of the sensor layer was well corrected with the help of an analysis of the oxidation rate of the sensor material. On the other hand, the in-depth composition profile analyzed by Auger electron spectroscopy (AES) indicated no significant composition variation, implying that we could neglect the correction factor for the composition variation in the present study. After the thickness factor was corrected for, a minor drift was still observed; this was also found for the same sensor film tested in an Ar ambient. The exact source of the minor drift is not well understood; further investigations are required.