等效表面电荷对台面半导体器件钝化的影响

进一步研究了半导体斜角造型p-n结的表面空间电荷层模型与表面耗尽区模型.计算了耗尽情况下p-n结的表面空间电荷密度,分析了等效表面电荷密度对正斜角造型p-n结表面耗尽区的影响.利用聚酰亚胺和聚酯改性漆钝化的晶闸管电学特性证实了等效表面电荷密度对台面半导体钝化的影响.同时,通过分别采用聚酰亚胺和掺氧多晶硅钝化的高压整流管研究表明,基于掺氧多晶硅的钝化结构具有屏蔽电荷和均匀电场的作用.

Influence of Surface Charge on the Passivation of Beveled Semiconductor Device

Surface space-charge layer model and surface depletion area model are investigated further.The surface space-charge density was calculated for depletion case of beveled p-n junction,and the effect of the equivalent surface charge density on the surface depletion area for positively beveled p-n junction was also analysised.Power semiconductor devices passivated with polyimide,polyester improved silicon paint or SIPOS were fabricated to investigate the effect of equivalent surface charge on the passivation properties of beveled p-n junction.The results obtained show that the change of leakage current is sensitive to the surface charges,and the field distribution near the surface will become more homogeneous and undesired charges are compensated by the SIPOS.