| 薄有源层非晶硅薄膜晶体管特性的研究 |
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| 引用本文： | 张少强,徐重阳.薄有源层非晶硅薄膜晶体管特性的研究[J].电子学报,1997,25(2):53-56. |
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| 作者姓名： | 张少强 徐重阳 |
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| 作者单位： | 华中理工大学团体电子学系 |
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| 摘 要： | 本文研究了薄ａ－Ｓｉ：Ｈ有源层结构的ａ－Ｓｉ：Ｈ ＴＦＴ的特性，实验结果表明，当ａ－Ｓｉ：Ｈ层的厚度小于一个临界值时，ａ－Ｓｉ：Ｈ厚度的变化对ａ－Ｓｉ：Ｈ ＴＦＴ静态特性的影响明显增大，本文中详细分析了有源层背面空间电荷层对ａ－Ｓｉ：Ｈ ＴＦＴ特性的影响，从表面有效空间电荷层的概念出发，从理论上分析了有源层厚度与阈值电压的关系，计算的临界有源层厚度为１３０ｎｍ，这与实验结果基本一致。
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| 关 键 词： | 非晶硅 薄膜晶体管 有源层厚度 空间电荷层 |
The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure |
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| Zhang Shaoqiang,Xu Zhongyang,Zou Xuecheng ,Zhao Bofang,Zhou Xuemei,Wang Changan,Dai Yongbin.The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure[J].Acta Electronica Sinica,1997,25(2):53-56. |
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| Authors: | Zhang Shaoqiang Xu Zhongyang Zou Xuecheng Zhao Bofang Zhou Xuemei Wang Changan Dai Yongbin |
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| Abstract: | The a-St: H TFT with thin active layer structure is studied in this paper. The experimental results show that the characteristics of a-Si: H TFT vary when the a-Si: H thickness is smaller than some critical value. The effects of the space charge in the active layer rear surface on the a-Si: H TFT characteristics are discussed in detail. The dependence of the threshold voltage on the active layer thickness is calculated with the effective surface space charge layer model,and the critical active layer thickness is 130nm,which is baSically consistent with experiment results. |
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| Keywords: | Amorphous silicon Thin-film transistors Active layer thickness Space chargelayer |
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