| (Bi,Yb)4Ti3O12铁电薄膜的制备 |
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| 引用本文： | 成传品,唐明华,叶志,钟向丽,郑学军,周益春. (Bi,Yb)4Ti3O12铁电薄膜的制备[J]. 半导体技术, 2006, 31(8): 612-613,631 |
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| 作者姓名： | 成传品 唐明华 叶志 钟向丽 郑学军 周益春 |
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| 作者单位： | 湘潭大学,材料与光电物理学院,湖北,湘潭,411105;湘潭大学,材料与光电物理学院,湖北,湘潭,411105;湘潭大学,材料与光电物理学院,湖北,湘潭,411105;湘潭大学,材料与光电物理学院,湖北,湘潭,411105;湘潭大学,材料与光电物理学院,湖北,湘潭,411105;湘潭大学,材料与光电物理学院,湖北,湘潭,411105 |
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| 摘 要： | 采用稀有金属镱元素对钛酸铋进行掺杂,以期获得性能较好的(Bi,Yb)4Ti3O12铁电薄膜.采用溶胶-凝胶旋涂法在p型Si(100)基底上成功地沉积出(Bi34,Yb06)Ti3O12[BYT]铁电薄膜.用X射线衍射法对其结构及其成份进行了表征,用铁电分析仪(RT66A)测试了其铁电性.并就影响BYT薄膜铁电性能的因素进行了分析.
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| 关 键 词： | 溶胶-凝胶 BYT铁电薄膜 制备 分析 |
| 文章编号： | 1003-353X（2006）08-0612-02 |
| 收稿时间： | 2006-01-06 |
| 修稿时间： | 2006-01-06 |
Preparation of Yb-Doped Bi4Ti3O12 Thin Films |
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| CHENG Chuan-pin,TANG Ming-hua,YE Zhi,ZHONG Xiang-li,ZHENG Xue-jun,ZHOU Yi-chun. Preparation of Yb-Doped Bi4Ti3O12 Thin Films[J]. Semiconductor Technology, 2006, 31(8): 612-613,631 |
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| Authors: | CHENG Chuan-pin TANG Ming-hua YE Zhi ZHONG Xiang-li ZHENG Xue-jun ZHOU Yi-chun |
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| Abstract: | Ytterbium were selected to dope BIT for gaining (Bi,Yb)4Ti3O12 (BYT) thin films of better properties. Bi3.4,Yb0.6)Ti3O12 BYT ferroelectric thin films were successfully deposited on p-type Si (100) substrates by sol-gel spin coating process. The X-ray diffraction(XRD) were employed to ana- lyze the structure and composition of BYT thin films. The ferroelectric measurements were performed using a RT66A ferroelectric tester. Some factors which affect the properties of BYT thin films were discussed. |
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| Keywords: | sol-gel BYT ferroelectric thin films preparation analysis |
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