High-density MIM capacitors using AlTaO/sub x/ dielectrics |
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| Authors: | Yang MY Huang CH Chin A Chunxiang Zhu Li MF Dim-Lee Kwong |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan; |
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| Abstract: | The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF//spl mu/m/sup 2/ using high-/spl kappa/ AlTaO/sub x/ fabricated at 400/spl deg/C. In addition, small voltage dependence of capacitance of <600 ppm (quadratic voltage coefficient of only 130 ppm/V/sup 2/) is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-/spl kappa/ AlTaO/sub x/ MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime. |
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